Table5
表 5 The computed result from the quenching experiment
Sample | The contribution to phenol degradation/% | |
·O2 − | ·OH | |
Control | 42.1 | 74 |
15 V | 45.7 | 76.3 |
20 V | 47 | 79 |
25 V | 50.5 | 84 |
30 V | 48.6 | 81 |
Table4
表 4 XPS analysis of TNTs/SnO2-Sb electrodes with different substrate preparation voltages
Sample | Binding energy/eV | Oads (at% = \(\dfrac{\rm{O}_{\mathrm{a}\mathrm{d}\mathrm{s} }}{\mathrm{S}\mathrm{n} + \mathrm{S}\mathrm{b} + \mathrm{O}_{\mathrm{a}\mathrm{d}\mathrm{s}} + \mathrm{O}_{\mathrm{l}\mathrm{a}\mathrm{t} }}\) × 100% ) | Atom ratio of Olat/(Sn + Sb) | |||
Sn 3d5/2 | Sb 3d5/2 | Oads | Olat | |||
Control | 486.91 | 530.89 | 532.03 | 530.73 | 14.6 | 2.65 |
15 V | 486.84 | 530.90 | 531.98 | 530.69 | 17.9 | 2.41 |
20 V | 486.46 | 531.19 | 531.96 | 530.64 | 19.8 | 2.18 |
25 V | 486.21 | 531.12 | 531.89 | 530.55 | 25.6 | 1.88 |
30 V | 486.35 | 530.94 | 531.91 | 530.59 | 23.2 | 1.97 |
Table3
表 3 Effect of preparation voltage of TNTs arrays on the contact angle of substrate surface and loading amount of SnO2-Sb
Sample | Contact angle/(°) | Loading amount/(mg·cm−2) |
Ti | 52 | 2.05±0.05 |
TNTs (15 V-2 h) | 43 | 2.15±0.04 |
TNTs (20 V-2 h) | 34 | 2.24±0.04 |
TNTs (25 V-2 h) | 13 | 2.36±0.03 |
TNTs (30 V-2 h) | 10 | 2.42±0.02 |
Table2
表 2 EIS fitting results of TNTs/SnO2-Sb electrodes with different substrate preparation voltages
Sample | Rs/Ω | Ch/F | Rh/Ω | Ct/F | Rt/Ω |
Ti/SnO2-Sb | 4.72 | 5.33×10−8 | 49.3 | 2.02×10−5 | 49 |
TNTs (15 V)/SnO2-Sb | 4.71 | 5.62×10−8 | 47.6 | 2.06×10−5 | 48 |
TNTs (20 V)/SnO2-Sb | 4.69 | 5.84×10−8 | 46.9 | 2.11×10−5 | 47 |
TNTs (25 V)/SnO2-Sb | 4.67 | 6.33×10−8 | 44.3 | 2.20×10−5 | 45 |
TNTs (30 V)/SnO2-Sb | 4.74 | 6.12×10−8 | 45.4 | 2.16×10−5 | 46 |
Table1
表 1 Effect of preparation conditions for TNTs arrays on the average crystal size of SnO2-Sb calculated by Scherrer formula
Sample | Crystallite size/nm |
Ti/SnO2-Sb | 23±0.3 |
TNTs (15 V)/SnO2-Sb | 20±0.3 |
TNTs (20 V)/SnO2-Sb | 17±0.4 |
TNTs (25 V)/SnO2-Sb | 15±0.3 |
TNTs (30 V)/SnO2-Sb | 13±0.4 |
Scherrer formula: D=kλ/(βcosθ), where D is the crystallite size, k is the Scherrer constant (0.89), λ is the wavelength of incident ray, β is the full width at half maximum of the peak, and θ is the position of plane peak[30]. |
主办单位:煤炭科学研究总院有限公司 中国煤炭学会学术期刊工作委员会