【目的】磁性材料的本征磁矩可以引发反常霍尔效应,显著降低霍尔电阻,从而改善微纳电子器件热损弊端。二维范德华磁性材料在原子级厚度上展现了出色的铁磁特性与输运性能,可用于制备下一代低维自旋电子器件,在低功耗自旋电子学、量子计算和光通信领域具有巨大的潜力。【方法】研究了块体Fe3GeTe2(FGT)的铁磁性和磁各向异性,制备了基于FGT的标准霍尔器件,并详细研究了不同温度和外加磁场方向下FGT纳米片的磁电输运性能。【结果】结果显示,块体FGT在低于居里温度(Tc=165K)时,具有显著的面外磁易轴(H//c)。零磁场时,存在0.764Ω的反常霍尔电阻(20K),并且,在140K时减小到0.332Ω,证明了FGT具有随温度调控的反常霍尔效应;随着外加磁场方向改变,磁滞回环由接近矩形逐渐转变为扁平菱形,表明FGT磁化方向已由面外转变为面内,进一步验证了FGT具有本征的面外磁各向异性。最后,我们还计算了大磁场下(−6T~6T)FGT的载流子浓度(20K时为2.5×1022cm-3)和迁移率(20K时为13.3cm2/(V·s))。

【Purposes】The intrinsic magnetic moments of magnetic materials can lead to anoma‐ lous Hall effects, and the Hall resistance can be significantly reduced, thus improving the heat loss in  micro- and nanoelectronic devices. Two-dimensional van der Waals magnetic materials have shown  fascinating natural ferromagnetic properties at the atomic level, which has great potential in the fields  of low power spintronics, quantum computing, and optical communication. 【Methods】 Herein, the fer‐ romagnetism and magnetic anisotropy of bulk Fe GeTe  (FGT) were investigated. In addition, the  anomalous Hall effect of FGT nanoflakes was studied at various temperatures and thicknesses by stan‐ dard Hall bar device in detail. 【Findings】 The results indicate that a pronounced vertical magnetic an‐ isotropy exists below the Curie temperature (T =165 K) of FGT. There is an anomalous Hall resis‐ tance of 0.764 Ω at 20 K at zero magnetic field, and it decreases to 0.332 Ω at 140 K, which proves  that FGT has an anomalous Hall effect regulated with temperature. The hysteresis loop gradually  changes from nearly rectangular shape to flat diamond shape, indicating that the magnetization direc‐ tion of FGT has changed from out-of-plane to in-plane, which further verifies that FGT has intrinsic  out-of-plane magnetic anisotropy. Furthermore, the carrier concentration (2.5×10  cm  at 20 K) and  mobility (13.3 cm /(V·s) at 20 K) under large magnetic field (−6 T~6 T) are calculated.